Etude de l’effet de l’implantation ionique dans le CuInSe2 et autres ternaires

Abstract

The main objective in this work consists on developing a theoretical model that allows the study of the optical properties of ternary samples that have been subjected to an ion implantation process. The model allows the extraction of the properties of the implanted layer from that of the substrate. It is based on the photoacoustic spectroscopy technique by assuming a multilayer samples configuration. As an application, we analyze the effect of introducing oxygen in the compound CuInSe2. Oxygen is known for its impact in improving the performance of solar cells based on CuInSe2 as the absorber layer. Previous studies in the literature are numerous; however, they were not able to isolate the contribution of the substrate to the implanted layer. Thus, no clear image on the effect of oxygen in CuInSe2 does exist. This study gives for the first time the optical properties near the fundamental edge of CuInSe2 following oxygen introduction by ion implantation. A discussion on defect formation is given in the light of current literature.