Elaboration et caractérisation de couches minces de Cu(In,Ga)Se2

Abstract

CuInSe2 thin films were grown by a one-step electrodeposition on Mo substrates. The prepared films were annealed at 300, 400 and 500 oC for 30 min in vacuum. Cyclic voltammetry tests were firstly used to investigate the electrodeposition mechanism. The structural, morphological and composition properties of these films were investigated using scanning electron microscopy (SEM) and X-ray diffraction (XRD) with an energy dispersive X-ray spectrometer. The XRD results showed that the films exhibit polycrystalline tetragonal CuInS2 phase with (112) orientation. According to the EDX results, the [Cu]/[In] ratios of the films were respectively 0.3, 0.6 and 1.12 for [Se]/[In] starting ratios of 1, 1.66 and 2, respectively.