Cinétiques et mécanismes de croissance de composés bimétalliques et de siliciures dans les structures à base de cobalt et de silicium

Abstract

This work focuses on the study of siliside formation from the Ni/Co/Si(111). Samples were obtained by depositing a bilayer of cobalt and nickel by cacuum evaporation on a monocrystalline silicon substrate oriented (111). To initiate the reaction of silicidation in solid phase, these samples have been annealed to various temperature (300, 500, 700, 900°C). We used three techniques of caracterization, namely, the Grazing Incident X-Ray Diffraction (GIXRD), the Ratherford Backscattering Spectroscopy (RBS) and Scanning Electron Microscopy (SEM), to follow the evolution of ours amples based on annealing. After analysing the results, we noted that the silicide formation is observed from the temperature of 700°C by the presence of cobalt silicide phase CoSi and the beginning of CoSi2 The angular shift of diffraction peaks of CoSi phase formation, who becomes magority at 900°C. The SEM images allowed us to see the evolution of the surface state of ours amples which becomes rougher withincreasing temperature. 2 phase at small angles announcing an increase in the volume of its lattice and the interdiffusion of the elements Co, Ni and Si observed by RBS, led us to believe that there is formation of the solid solution (CoSi2-Ni) or more likely the formation of the ternary silicide CoxNi1-xSi2 Keywords : silicon, cobalt, nickel, silicide, CoSi, CoSi .