Etudes des composants electroniques (cellules solaires, diodes schottky) en utilisant les algorithmes genetiques et le langage VHDL AMS

Abstract

In this work we have studied the I-V characteristics versus temperature T of the Schottky diode structures (metal-4H-SiC) and solar structures (cells-modules). Our characterization is aimed for the investigation of the spatial distribution of the barrier height φB in the Schottky diodes and of the band gap energy Eg for the solar structures. The analysis of the inhomogeneity of the barrier φB and the energy Eg is an important criterion to understand the behavior of the interfaces with semiconductors. A comparative study is made for homogeneous structures. The models used in our work for characterization are very strong: Vertical Optimization Method VOM using Lambert function W and Werner’s model. In the first part of this thesis, we extract parameters of Schottky diodes (homogeneous and inhomogeneous structures) and solar cells-modules with VOM method. In the second part we use Werner’s model to the I-V-T characteristics (direct mode) to explain the physics of the barrier φB in the Schottky structures (Mo/4H-SiC and W/4H-SiC with different diameters) and in the solar structures. In addition, we studied in this work the effect of the inhomogenity on the solar structure’s performances like the open circuit voltage Voc and the short circuit current Isc. Good results are found from the study of real and simulated I-V-T characteristics witch prove the validity of our executed programs for the extraction of parameters of Schottky diodes and solar structures. The results found in this work are in very good agreement with those given by the theory.