Application de la spectroscopie de photoacoustique dans l’analyse des propriétés optiques des effets d’implantation de Ne+ et de Xe+ dans CuInSe2

Abstract

In this thesis, we exploit for the first time the measurements obtained from photoacoustic spectroscopy in the analysis of the optical properties on the effects of implanting ions of neon and xenon at different doses and with 40 keV in different samples of CuInSe2 single crystals. A simulation using SRIM-2010 has been carried out in order to optimize the implementation process as well as to understand the formation of defects in CuInSe2. In order to separate the spectrum of the implanted layer from that of the substrate, we developed two models based on photoacoustic measurements: a two-layer model in which a theoretical relation has been derived for the photoacoustic signal amplitude, and the other one is based on the phase resolved method. Once the separation of the spectra was made, we study the impact of 40 keV implants of Ne + and Xe + on the optical properties of CuInSe2. Electrical Measurements of surface topology images are used as arguments. The results obtained here are compared to those published in the literature.