Cellules solaires en couches minces à base du Cu2ZnSn(S,Se)4 et des matériaux non polluants: Etude et optimisation

Abstract

In thiswork, wehavegrownahigh puritysingle ingotof CZTS and CZTSe by slowlycoolinga molten stoichiometric mixture. The characterizations showed that theobtainedingots are of quasi-stoichiometric nature, of good crystalline qualitywhich crystallizein the kesterite structure. Theingotselectrical study at room temperature revealed that they are of p type conductivity with average values of resistivity, mobility and charge carrier concentration in good agreement with the reported ones in the literature. The temperature dependence of conductivity reflected the dominance of band conductivity andNearest NeighborHoppingNNHconductivityathigh and low temperature range, respectively.Measurements analyses alloweddeducing the activation energies and predict the dominant defects. Thus, the temperature dependence of the mobility revealed the dominance of ionized impurity and acoustic phonon scatteringmechanisms at low and high temperature regimes, respectively. The application of CZTS, CZTSSe materials to the photovoltaic cell is developed by numerical simulation of a graded model using SCAPS-1D numerical simulator.CZTSSe graded solar cell’s simulation revealed an efficiency of 14.05%.Moreover, we have established the potential of SnS2as agoodalternative to CdS as a buffer layer.