Etude de l’effet photoacoustique dans les semiconducteurs composés de deux couches

Abstract

Photoacoustic spectroscopy (PAS) is currently attracting a lot of interest as a very reliable technique in the study of the optical properties of bulk and thin film semiconductors. The flexibility in their use in determining the optical spectra of samples with varying degrees of sensitivity and the ability to study in depth, make this a very powerful technique in nondestructive testing. Our objective in this work is to study the photoacoustic response originating from silicon based samples composed of two layers by deriving a theoretical relation for the photoacoustic signal that is going to be used to single out the absorption spectral behavior of each layer. The simulation results obtained are shown to be in good agreement with existing experimental results in the literature.