Caractérisation fine et modélisation non-linéaire des transistors MOSFET

Abstract

In this work, a non-linear model for MOS transistors for RF applications has been developed. This model reproduces accurately the RF characteristics of MOS transistors in small signal as well as in large signal regime. It takes into account the effect of package, which is present in discrete transistors. The model has been validated through large signal measurements, using a vectorial network analyzer. The model’s parameter extraction is very fast and its implementation in a circuit commercial simulator is very easy. As an application, a power amplifier is designed and realized in LDMOS technology.